Solid-state imaging device and electronic apparatus

ABSTRACT

Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/585,976, filed Sep. 27, 2019, which is a continuation of U.S. patentapplication Ser. No. 15/771,170, filed Apr. 26, 2018, now U.S. Pat. No.10,469,780, which is a national stage application under 35 U.S.C. 371and claims the benefit of PCT Application No. PCT/JP2016/081505 havingan international filing date of Oct. 25, 2016, which designated theUnited States, which PCT application claimed the benefit of JapanesePriority Patent Application JP 2015-217860 filed on Nov. 5, 2015, thedisclosures of each of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a solid-state imaging device and anelectronic apparatus and particularly relates to a solid-state imagingdevice and an electronic apparatus capable of achieving highersensitivity in imaging characteristics and enhanced autofocus accuracy,in a solid-state imaging device that includes a photoelectric conversionfilm.

BACKGROUND ART

As a system to implement autofocus of an imaging device such as adigital camera, there is a known pupil-split phase difference detectionsystem that uses an output from a phase difference detection pixelhaving asymmetric sensitivity with respect to an incident angle oflight.

As a technique to implement the pupil-split phase difference detectionsystem on a solid-state imaging device including a photoelectricconversion film, there is a technique disclosed in the prior art inwhich a solid-state imaging device obtains an image-generation signal ona photoelectric conversion film provided on an upper side of a siliconsubstrate, and obtains a phase difference detection signal on aphotodiode provided within the silicon substrate.

Meanwhile, according to a technique disclosed in the prior art, an upperelectrode and a lower electrode are provided so as to sandwich thephotoelectric conversion film, and among these, the lower electrode isarranged to be formed in different regions in a pair of pixels, therebyforming a phase difference detection pixel.

CITATION LIST Patent Literature

[PTL 1]

-   JP 2011-103335 A    [PTL 2]-   JP 2015-050331 A

SUMMARY OF INVENTION Technical Problem

According to a solid-state imaging device described in the prior art,light incident on the photodiode is light that has been transmittedthrough the photoelectric conversion film without being absorbed by thephotoelectric conversion film. Accordingly, the intensity of the lightincident on the photodiode is weak, making it difficult to obtain highautofocus accuracy.

Meanwhile, on a pixel provided for obtaining an ordinary imaging signal,it would be preferable to minimize the area of the lower electrodewithin a range in which necessary sensitivity output can be obtained.When the area of the lower electrode is large, the lower electrodecapacitance is increased, leading to lowered efficiency when the chargeis converted to a voltage.

The present disclosure is made in view of this situation to desirablyachieve higher sensitivity in imaging characteristics and enhancedautofocus accuracy, on the solid-state imaging device including aphotoelectric conversion film.

Solution to Problem

The solid-state imaging device according to an aspect of the presentdisclosure includes an imaging pixel that includes an upper electrodeand a lower electrode that sandwich a photoelectric conversion film andthat is used for obtaining an imaging signal, and a phase differencepixel that includes the upper electrode and the lower electrode and thatis used to obtain a phase difference detection signal, wherein an areaof one of the electrodes that is on an output side of a signal chargeand that is divided and provided for each of the pixels among the upperelectrode and the lower electrode provided on the phase difference pixelis larger than an area of the one of the electrodes among the upperelectrode and the lower electrode provided on the imaging pixel.

In accordance with further embodiments of the present disclosure, alight shielding film is provided to limit incident light above thephotoelectric conversion film of the phase difference pixel.

It is possible to configure the one of the electrodes of the phasedifference pixel to include a first electrode, a second electrode, and aseparating section that separates the first electrode from the secondelectrode.

The separating section may be configured to pass through the center ofthe phase difference pixel.

On the phase difference pixel, the area of the first electrode and thearea of the second electrode may be configured to be equal.

The separating section may be formed at a position biased with respectto the center of the phase difference pixel.

On the phase difference pixel, the area of first electrode may beconfigured to be smaller than the area of the second electrode.

The first electrode of the phase difference pixel may be connected to acharge accumulation unit that is formed on a semiconductor substrate andis configured to accumulate a signal charge and output a phasedifference signal to the outside.

The second electrode of the phase difference pixel may be connected to acharge discharge unit.

The charge discharge unit may be configured with metal wiring formedbetween the phase difference pixel and an adjacent pixel.

The charge discharge unit may be configured integrally with the secondelectrode by using a material same as the material of the first andsecond electrodes, between the phase difference pixel and the adjacentpixel.

In an aspect of the present disclosure, the area of one of theelectrodes that is on an output side of a signal charge and is dividedand provided for each of the pixels, among the upper electrode and thelower electrode provided on the phase difference pixel, is larger thanthe area of the one of the electrodes among the upper electrode and thelower electrode provided on the imaging pixel.

Each of the solid-state imaging device and the electronic apparatus maybe an independent device or a module built into another device.

Advantageous Effects of Invention

According to an embodiment of the present disclosure, it is possible toachieve higher sensitivity in imaging characteristics and enhancedautofocus accuracy, on the solid-state imaging device including aphotoelectric conversion film.

Note that effects described herein are not limited. The effects may beany effects described in the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram illustrating an exemplary configuration of asolid-state imaging device.

FIG. 2 is a plan view illustrating a form of a lower electrode accordingto a first embodiment.

FIG. 3 is a cross-sectional view illustrating a structure of a pixelaccording to the first embodiment.

FIG. 4 is a diagram illustrating an area of a lower electrode and anoutput voltage characteristic.

FIG. 5 is a diagram illustrating an output voltage characteristic withrespect to an incident angle of light.

FIG. 6 is a plan view illustrating a form of a lower electrode accordingto a second embodiment.

FIG. 7 is an enlarged view of the lower electrode of a phase differencepixel in FIG. 6 .

FIG. 8 is a diagram illustrating a lower electrode of an imaging pixeland a lower electrode of a phase difference pixel.

FIG. 9 is a cross-sectional view illustrating a structure of a pixelaccording to the second embodiment.

FIG. 10 is a cross-sectional view illustrating a structure of a pixelaccording to a third embodiment.

FIG. 11 is a plan view illustrating a form of a lower electrodeaccording to a fourth embodiment.

FIG. 12 is a cross-sectional view illustrating a structure of a pixelaccording to the fourth embodiment.

FIG. 13 is a diagram illustrating an output voltage characteristic withrespect to an incident angle of light.

FIG. 14 is a diagram illustrating an output voltage characteristic withrespect to an incident angle of light.

FIG. 15 is a plan view illustrating a form of a lower electrodeaccording to a fifth embodiment.

FIG. 16 is a cross-sectional view illustrating a structure of a pixelaccording to the fifth embodiment.

FIG. 17 is a plan view illustrating a form of a lower electrodeaccording to a sixth embodiment.

FIG. 18 is a cross-sectional view illustrating a structure of a pixelaccording to the sixth embodiment.

FIG. 19 is a plan view illustrating a form of a lower electrodeaccording to a seventh embodiment.

FIG. 20 is a block diagram illustrating an exemplary configuration of animaging device.

FIGS. 21A to 21C are exemplary substrate configurations of a solid-stateimaging device.

FIG. 22 illustrates exemplary applications of a solid-state imagingdevice.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described.Note that description will be in the following order.

-   -   1. Exemplary configuration of solid-state imaging device    -   2. Exemplary pixel structure according to first embodiment        (example in which light shielding film is provided on phase        difference pixel)    -   3. Exemplary pixel structure according to second embodiment        (first example in which lower electrode of phase difference        pixel is divided)    -   4. Exemplary pixel structure according to third embodiment        (example in which both of lower electrodes of phase difference        pixel are connected to charge accumulation unit)    -   5. Exemplary pixel structure according to fourth embodiment        (second example in which the lower electrode of the phase        difference pixel is divided)    -   6. Exemplary pixel structure according to fifth embodiment        (first example in which charge discharge mechanism is provided)    -   7. Exemplary pixel structure according to sixth embodiment        (second example in which the charge discharge mechanism is        provided)    -   8. Exemplary pixel structure according to seventh embodiment        (third example in which charge discharge mechanism is provided)    -   9. Modification

1. Exemplary Configuration of Solid-State Imaging Device

FIG. 1 is a block diagram illustrating an exemplary configuration of asolid-state imaging device.

A solid-state imaging device 1 of FIG. 1 is an imaging device includinga photoelectric conversion film. The solid-state imaging device 1 isconfigured to include a pixel array unit 3 and a peripheral circuit unitformed on a semiconductor substrate that uses, for example, a silicon(Si) as a semiconductor.

The pixel array unit 3 includes pixels 2 two-dimensionally arranged in amatrix. The peripheral circuit unit includes a vertical drive circuit 4,a column signal processing circuit 5, a horizontal drive circuit 6, anoutput circuit 7, and a control circuit 8.

Each pixel 2 generates and outputs a signal corresponding to the lightquantity of the incident light. The signal output from a pixel 2includes a signal obtained by performing photoelectric conversion on aphotoelectric conversion film.

As illustrated below with reference to FIG. 2 , or the like, the pixels2 include an imaging pixel 2X and a phase difference pixel 2P. Theimaging pixel 2X is used to obtain an image generation signal. The phasedifference pixel 2P is used to obtain a phase difference detectionsignal. At least a portion of the pixels 2 within the pixel array unit 3correspond to the phase difference pixel 2P.

Hereinafter, an image generation signal output from the imaging pixel 2Xwill be referred to as an imaging signal and a phase differencedetection signal output from the phase difference pixel 2P will bereferred to as a phase difference signal, appropriately.

Each pixel 2 can include a photoelectric conversion unit that uses aphotodiode and a photoelectric conversion film, and a plurality of pixeltransistors (also referred to as MOS transistors). Examples of theplurality of pixel transistors include four types of MOS transistors,namely, a transfer transistor, a selection transistor, a resettransistor, and an amplification transistor.

On the basis of a vertical synchronizing signal, a horizontalsynchronizing signal, and a master clock, the control circuit 8generates a clock signal and a control signal to be a standard ofoperation of the vertical drive circuit 4, the column signal processingcircuit 5, and the horizontal drive circuit 6, and outputs the signalsto individual sections.

The vertical drive circuit 4 includes, for example, a shift register.The vertical drive circuit 4 selects pixel drive wiring 10 and suppliesa pulse to drive the pixel 2 to the selected pixel drive wiring 10,thereby driving the pixel 2 in a unit of line. Specifically, thevertical drive circuit 4 selectively scans the pixels 2 of the pixelarray unit 3 sequentially in a unit of line, in the vertical direction,and allows the image signal generated at each of the pixels 2corresponding to the light receiving quantity to be supplied to thecolumn signal processing circuit 5 via a vertical signal line 9.

The column signal processing circuit 5 is arranged for each of thecolumns of pixels 2. Each of the column signal processing circuits 5performs, for each of the pixel lines, signal processing such as noisereduction with respect to the pixel signals, as targets, output from thepixels 2 in one line. For example, the column signal processing circuit5 performs signal processing such as correlated double sampling (CDS) toreduce a pixel-specific fixed pattern noise and AD conversion.

The horizontal drive circuit 6 includes, for example, a shift register.The horizontal drive circuit 6 sequentially selects each of the columnsignal processing circuits 5 by sequentially outputting horizontal scanpulses, and causes each of the column signal processing circuits 5 tooutput a pixel signal to a horizontal signal line 11.

The output circuit 7 performs signal processing of the pixel signalssequentially supplied from each of the column signal processing circuits5 via the horizontal signal line 11, and outputs the processed signals.The output circuit 7 performs signal processing such as buffering, blacklevel adjustment, and column variation correction. An input/outputterminal 12 performs signal transmission with the outside.

The above-configured solid-state imaging device 1 is a CMOS image sensorreferred to as a column AD system in which the column signal processingcircuit 5 that performs CDS processing and AD conversion processing isarranged at each of the pixel columns.

2. Exemplary Pixel Structure According to First Embodiment

FIG. 2 is a plan view illustrating a form of a lower electrode of asolid-state imaging device 1 according to a first embodiment.

As described in detail below, a photoelectric conversion film of each ofthe pixels 2 is arranged to be sandwiched between an upper electrode anda lower electrode. FIG. 2 illustrates a configuration of a lowerelectrode layer and a light shielding film layer provided on the lowerelectrode layer in a plan view.

FIG. 2 illustrates an eight-pixel portion including 2 lines×4 columnsamong the pixels 2 included in the pixel array unit 3. Broken linesillustrated in FIG. 2 indicate boundaries between the pixels 2.Configurations similar to the configuration illustrated in FIG. 2 areprovided in individual sections of the pixel array unit 3.

On the first line from the top in FIG. 2 , imaging pixels 2X and phasedifference pixels 2P are arranged alternately. A phase difference pixel2PA and a phase difference pixel 2PB arranged in the left and right ofthe imaging pixel 2X to sandwich the imaging pixel 2X are a pair ofphase difference pixels 2P used to compare a phase difference. On thesecond line, four imaging pixels 2X are arranged. Note that thearrangement of the pixels 2 included in the pixel array unit 3 is notlimited to the example illustrated in FIG. 2 . For example, the phasedifference pixel 2PA and the phase difference pixel 2PB may be arrangedto be adjacent to each other.

A substantially square lower electrode 51A is provided on the phasedifference pixel 2PA. The lower electrode 51A is arranged such that itscenter position corresponds to the center position of the phasedifference pixel 2PA (optical axis position of an on-chip lens providedon the pixel). Similarly, the substantially square lower electrode 51Bis provided on the phase difference pixel 2PB. The lower electrode 51Bis arranged such that its center position corresponds to the centerposition of the phase difference pixel 2PB.

A light shielding film 52A is provided so as to cover substantially allof the right half of the phase difference pixel 2PA except for asurrounding small-width portion on the phase difference pixel 2PA. Inaddition, a light shielding film 52B is provided so as to coversubstantially all of the left half of the lower electrode 51B, exceptfor a surrounding small-width portion on the phase difference pixel 2PB.

Meanwhile, a substantially square lower electrode 51C is provided on theimaging pixel 2X. The lower electrode 51C is arranged such that theposition of the center of the lower electrode 51C corresponds to thecenter position of the imaging pixel 2X.

In this manner, the lower electrodes are provided on the phasedifference pixel 2P and the imaging pixel 2X separately for each of thepixels, although in a plan view the areas of the lower electrodes aredifferent from each other. Specifically, the area of the lower electrodeprovided on a phase difference pixel 2P is larger than the area of thelower electrode provided on an imaging pixel 2X.

Hereinafter, in a case where no distinction is needed, a lower electrode51A provided on a phase difference pixel 2PA, a lower electrode 51Bprovided on a phase difference pixel 2PB, and a lower electrode 51Cprovided on the imaging pixel 2X will be collectively referred to as alower electrode 51, appropriately.

FIG. 3 is a cross-sectional view illustrating a pixel structure takenalong line A-A′ in FIG. 2 .

As illustrated in FIG. 3 , the pixels 2 include a semiconductorsubstrate 61, a transparent insulating film 71, a lower electrode 51, aphotoelectric conversion film 81, an upper electrode 82, an interlayerinsulating film 91, and an on-chip lens 101, stacked in this order fromthe bottom.

A charge accumulation unit 62 formed with a semiconductor region of asecond conduction type (e.g. n-type) is provided on a semiconductorsubstrate 61 of a first conduction type (e.g. p-type).

Above the semiconductor substrate 61, the upper electrode 82 and thelower electrode 51 are arranged so as to sandwich the photoelectricconversion film 81. The upper electrode 82 is arranged over a wholesurface of the pixel array unit 3, across the plurality of pixels 2.Meanwhile, the lower electrode 51 is divided and arranged for each ofthe pixels. As illustrated in FIG. 3 , the lower electrode 51A of thephase difference pixel 2PA and the lower electrode 51B of the phasedifference pixel 2PB each has an area larger than an area of the lowerelectrode 51C of the imaging pixel 2X.

The lower electrode 51 is connected to the charge accumulation unit 62via metal wiring 72 as a charge transfer means. The signal chargeobtained by the photoelectric conversion performed on the photoelectricconversion film 81 is collected onto the lower electrode 51, transferredto the charge accumulation unit 62 and accumulated.

A light shielding film 52A is formed within the interlayer insulatingfilm 91 of a phase difference pixel 2PA and a light shielding film 52Bis formed within the interlayer insulating film 91 of a phase differencepixel 2PB. By forming the light shielding films in different regions onthe phase difference pixel 2PA and on the phase difference pixel 2PB,incident angle characteristics of the sensitivity of each of the pixelsalso differ from each other. The signals output from the phasedifference pixel 2PA and the phase difference pixel 2PB correspond tophase difference signals representing a phase difference of an object.

By decreasing the area of the lower electrode of the imaging pixel 2X,it is possible to reduce the capacitance of the lower electrode, andthus, reduce the capacitance of the charge accumulation unit 62connected with the lower electrode. Viewed from the output side, it ispossible to assume, electrically, the capacitance of the lower electrodeas capacitance integrated with the capacitance of the chargeaccumulation unit 62.

As a result of reducing the capacitance of the charge accumulation unit62, it is possible to enhance conversion efficiency from charge tovoltage, that is, to enhance sensitivity of the imaging pixel 2X toincident light.

FIG. 4 is a diagram illustrating an output voltage characteristic withrespect to the area of the lower electrode.

In FIG. 4 , the horizontal axis in the graph represents the area of thelower electrode and the vertical axis represents the output voltage. Asillustrated in FIG. 4 , the output voltage is inversely proportional tothe capacitance. Accordingly, the larger the area of the lower electrodeand thus the larger the capacitance of the charge accumulation unit, thelower the output voltage. In short, by reducing the area of the lowerelectrode, it is possible to enhance the conversion efficiency from thecharge to the voltage. The size of the lower electrode of the imagingpixel 2X is preferably as small as possible as long as necessary outputsensitivity can be obtained.

On the other hand, by increasing the area of the lower electrode of thephase difference pixel 2P, a light-condensing spot is not easilydisplaced from a region of the lower electrode even when the incidentangle of light is great, making it possible to enhance sensitivity tolight with a large incident angle. With enhanced sensitivity towardincident light from an oblique direction, it is possible to increase thesensitivity difference between the pair of phase difference pixels 2P,in particular when the incident angle is large, and thus, to enhance theaccuracy with which a phase difference is detected.

FIG. 5 is a diagram illustrating an exemplary output voltagecharacteristic with respect to an incident angle of light.

In a graph on the left side in FIG. 5 , the horizontal axis representsthe incident angle of light, and the vertical axis represents the outputvoltage. Among the pair of phase difference pixels 2P, curved lines #1and #11 represent characteristics of one phase difference pixel 2Phaving sensitivity toward the light with an incident angle in thenegative direction, and curved lines #2 and #12 representcharacteristics of the other phase difference pixel 2P havingsensitivity toward the light with an incident angle in the positivedirection.

The solid curved lines #1 and #2 represent output voltages when the areaof the lower electrode is large, and one-dot-chained curved lines #11and #12 represent output voltages when the area of the lower electrodeis small.

The graph on the right of the open arrow indicates outputcharacteristics after standardization. On a signal processing unitoutside of the solid-state imaging device 1, processing to standardize aphase difference signal output from the phase difference pixel 2P isperformed, and then, the phase difference is detected on the basis ofthe standardized signal.

As illustrated in the graph on the right in FIG. 5 , in a case where anincident angle of light is a certain level or more in the negativedirection, the output voltage difference when the area of the lowerelectrode is large, represented as a difference between curved lines #1and #2, is greater than the output voltage difference when the area ofthe lower electrode is small, represented as a difference between curvedlines #11 and #12. Additionally, in a case where an incident angle oflight is a certain level or more incident angle exists in the positivedirection, the output voltage difference when the area of the lowerelectrode is large, represented as a difference between curved lines #1and #2, is greater than the output voltage difference when the area ofthe lower electrode is small, represented as a difference between curvedlines #11 and #12.

By increasing the area of the lower electrode, it is possible toincrease the output difference between the pair of pixels, namely, thephase difference pixels 2P when the incident angle of light is large.The capability of increasing the output difference between the pair ofphase difference pixels 2P leads to a possibility to enhance phasedifference detection accuracy, namely, autofocus accuracy.

In this manner, by increasing the area of the lower electrode of thephase difference pixel 2P to be relatively larger than the area of thelower electrode of the imaging pixel 2X, it is possible to enhancesensitivity of the imaging pixel 2X and enhance autofocus accuracy.

Note that in view of characteristics, the percentage of the area of thelower electrode with respect to the area of the imaging pixel 2X ispreferably 30% or below. In addition, the percentage of the area of thelower electrode with respect to the area of the phase difference pixel2P is preferably 50% or above.

Details of the cross-sectional structure described with reference toFIG. 3 will be described. The structure of the imaging pixel 2X will bedescribed first, and thereafter, structures of the phase differencepixel 2PA and the phase difference pixel 2PB will be described focusingon the difference from the structure of the imaging pixel 2X.

A photodiode with a p-n junction is formed (not illustrated) on thesemiconductor substrate 61 of the imaging pixel 2X by stackingsemiconductor regions of the second conduction type, in the depthdirection. For example, the photodiode formed on a side closer to theback-side (upper side in the figure) receives blue light and performsphotoelectric conversion, and the photodiode formed on a side closer tothe front-side (lower side in the figure) receives red light andperforms photoelectric conversion.

A pixel transistor that performs operations such as reading of thecharge accumulated in the photodiode, a wiring layer, or the like, areformed on the front-side of the semiconductor substrate 61.

The transparent insulating film 71 formed on the back-side of thesemiconductor substrate 61 includes a two-layer or a three-layer film,or the like, of a hafnium oxide (HfO₂) film and a silicon oxide film,for example.

The photoelectric conversion film 81 sandwiched between the upperelectrode 82 on the upper side and the lower electrode 51C is providedabove the transparent insulating film 71. The photoelectric conversionfilm 81, the upper electrode 82, and the lower electrode 51C form aphotoelectric conversion unit.

The photoelectric conversion film 81 includes, for example, when used asa film that performs photoelectric conversion of light of greenwavelength, organic photoelectric conversion materials includingrhodamine-based pigments, merocyanine-based pigments, and quinacridone.The upper electrode 82 and the lower electrode 51C are formed oftransparent electrode films such as an indium tin oxide (ITO) film andan indium zinc oxide film.

Note that when used as a film that performs photoelectric conversion ofred light, the photoelectric conversion film 81 may use, for example,organic photoelectric conversion materials includingphthalocyanine-based pigments as a material of the photoelectricconversion film 81. In addition, when the photoelectric conversion film81 is used as a film that performs photoelectric conversion of bluelight, the photoelectric conversion film 81 may use organicphotoelectric conversion materials including coumarin-based pigments,tris-8-hydroxyquinoline-Al (Alq3), and merocyanine-based pigments.

The lower electrode 51C formed for each of the imaging pixels isconnected to the charge accumulation unit 62 via the metal wiring 72penetrating through the transparent insulating film 71. The metal wiring72 is formed of a material such as tungsten (W), aluminum (Al), andcopper (Cu).

On an upper surface of the upper electrode 82, the interlayer insulatingfilm 91 is formed with an inorganic membrane including silicon nitride(SiN), silicon oxynitride (SiON), silicon carbide (SiC), or the like.The on-chip lens 101 is formed above the interlayer insulating film 91.Examples of materials of the on-chip lens 101 include silicon nitride(SiN), or resin-based materials such as styrenic resin, acrylic resin,styrene-acrylic copolymer resin, or siloxane based resin.

When the surface that includes pixel transistors is defined as afront-side of the semiconductor substrate 61, the above-structuredsolid-state imaging device 1 corresponds to a back-illuminated CMOSsolid-state imaging device, with light entering from the back-side.

In addition, the solid-state imaging device 1 performs photoelectricconversion of green light on the photoelectric conversion film 81 andperforms photoelectric conversion of blue and red light on a photodiodewithin the semiconductor substrate 61, and thus, functions as alongitudinal spectroscopic solid-state imaging device.

The phase difference pixel 2P has a pixel structure equal to thestructure of the imaging pixel 2X except that, as described above, thephase difference pixel 2P has a lower electrode area that is differentfrom the case of the imaging pixel 2X, and that the light shielding filmis included to cover a partial region of the pixel.

3. Exemplary Pixel Structure According to Second Embodiment

FIG. 6 is a plan view illustrating a form of a lower electrode of thesolid-state imaging device 1 according to a second embodiment.

Among the components illustrated in FIG. 6 , the component correspondingto the above-described component is provided with a same reference sign.Overlapping description will be appropriately omitted. The configurationillustrated in FIG. 6 differs from the configuration illustrated in FIG.2 , mainly in that the lower electrodes of the phase difference pixels2P are divided into two parts arranged in the horizontal direction, andthat there is no light shielding film to cover the phase differencepixel 2P.

As illustrated in FIG. 6 , the lower electrode of the phase differencepixel 2PA includes a lower electrode 51A-1, a lower electrode 51A-2, anda lower electrode separating section 51A-3. The lower electrodeseparating section 51A-3 is a region that passes through the center ofthe phase difference pixel 2PA and is provided between the lowerelectrode 51A-1 and the lower electrode 51A-2.

The lower electrode 51A-1 and the lower electrode 51A-2 are formed atpositions substantially symmetrical with respect to a vertical axisrepresented by line B-B′, passing through the center of the phasedifference pixel 2PA. The area of the lower electrode 51A-1 in a planview is substantially equal to the area of the lower electrode 51A-2 inthe plan view. There is no light shielding film on the phase differencepixel 2PA.

Similarly, the lower electrode of the phase difference pixel 2PBincludes a lower electrode 51B-1, a lower electrode 51B-2, and a lowerelectrode separating section 51B-3. The lower electrode separatingsection 51B-3 is a region that passes through the center of the phasedifference pixel 2PB and that is provided between the lower electrode51B-1 and the lower electrode 51B-2.

The lower electrode 51B-1 and the lower electrode 51B-2 are formed atpositions substantially symmetrical with respect to a vertical axispassing through the center of the phase difference pixel 2PB. Similarly,there is no light shielding film on the phase difference pixel 2PB.

FIG. 7 is an enlarged view of the lower electrode of the phasedifference pixel 2PA.

As illustrated in FIG. 7 , each of the lower electrode 51A-1 and thelower electrode 51A-2 has a substantially vertically-long rectangularform. The length of each of the lower electrode 51A-1 and the lowerelectrode 51A-2 in the vertical direction is longer than the length ofthe lower electrode 51C formed on the imaging pixel 2X, in the verticaldirection. The lower electrode separating section 51A-3 that isrepresented by the broken lines and has a small width is formed betweenthe lower electrode 51A-1 and the lower electrode 51A-2.

A region enclosed in a bold line L1 in FIG. 8 , formed by combiningthree regions of the lower electrode 51A-1, the lower electrode 51A-2,and the lower electrode separating section 51A-3, corresponds to theregion of the lower electrode 51A in FIG. 2 , for example. The centerposition of the substantially square region enclosed by the bold line L1matches with the substantially center position of the phase differencepixel 2PA.

When the lower electrode separating section 51A-3 is assumed to beincluded in a lower electrode region, the area in a plan view of thelower electrode formed on the phase difference pixel 2PA, namely, thearea of the region enclosed by the bold line L1, is larger than the areain the plan view of the lower electrode 51C formed on the imaging pixel2X, namely, the area of the region enclosed by the bold line L2. This isalso applicable to the lower electrode formed on the phase differencepixel 2PB.

FIG. 9 is a cross-sectional view illustrating a pixel structure takenalong line A-A′ in FIG. 6 .

Among the components illustrated in FIG. 9 , the component correspondingto the above-described component is provided with a same reference sign.Overlapping description will be appropriately omitted. The chargeaccumulation unit 62 is formed in the semiconductor substrate 61 of eachof the pixels.

Among the lower electrode 51A-1 and the lower electrode 51A-2, on thephase difference pixel 2PA, the lower electrode 51A-1 is connected tothe charge accumulation unit 62 via the metal wiring 72. In contrast,the lower electrode 51A-2 is not connected to the charge accumulationunit 62. Among the signal charges obtained by photoelectric conversionperformed on the photoelectric conversion film 81 of the phasedifference pixel 2PA, the signal charge collected by the lower electrode51A-1 is accumulated onto the charge accumulation unit 62.

Among the lower electrode 51B-1 and the lower electrode 51B-2, on thephase difference pixel 2PB, the lower electrode 51B-2 is connected tothe charge accumulation unit 62 via the metal wiring 72. In contrast,the lower electrode 51B-1 is not connected to the charge accumulationunit 62. Among the signal charges obtained by photoelectric conversionperformed on the photoelectric conversion film 81 of the phasedifference pixel 2PB, the signal charge collected by the lower electrode51B-2 is accumulated onto the charge accumulation unit 62.

In this manner, on the phase difference pixel 2P in FIG. 9 , among thelower electrodes divided and arranged within a same pixel, the lowerelectrode connected to the charge accumulation unit 62 are left-rightinverted between the phase difference pixel 2PA and the phase differencepixel 2PB.

Among the lower electrode 51A-1 and the lower electrode 51A-2, on thephase difference pixel 2PA, the lower electrode that contributes tocharge output is the lower electrode 51A-1 formed on the left side ofthe vertical axis passing through the center of the phase differencepixel 2PA in a plan view. Similarly, among the lower electrode 51B-1 andthe lower electrode 51B-2, on the phase difference pixel 2PB, the lowerelectrode that contributes to charge output is the lower electrode 51B-2formed on the right side of the vertical axis passing through the centerof the phase difference pixel 2PB in a plan view.

Since the lower electrodes that contribute to charge output are arrangedto be formed in different regions, it is possible to obtain incidentangle characteristics of the sensitivity, that differ in the pixel pairof the phase difference pixel 2PA and the phase difference pixel 2PB. Asa result, it is possible to obtain a phase difference signal withoutproviding a light shielding film.

On the other hand, by increasing the area (area enclosed by the boldline L1 in FIG. 8 ) of the lower electrode of the phase difference pixel2P, a light-condensing spot is not easily displaced from the lowerelectrode region, making it possible to enhance sensitivity toward thelight with a large incident angle. With enhanced sensitivity toward theincident light from an oblique direction, it is possible to increase thesensitivity difference between the pair of phase difference pixels 2P,when the incident angle is large in particular, and thus, to enhanceaccuracy to detect phase difference.

As a result of suppressing the area of the lower electrode 51C of theimaging pixel 2X, and reducing the capacitance of the chargeaccumulation unit 62, it is possible to enhance sensitivity of theimaging pixel 2X.

Note that the area of each of the lower electrodes 51A-1 and 51B-2 thatcontribute to charge output may be arranged to be substantially the sameas the area of the lower electrode 51C. With this arrangement, it ispossible to set the level of the phase difference signal output from thephase difference pixel 2 and the level of the imaging signal output fromthe imaging pixel 2X, when the same amount of light is incident, tosubstantially a same level. Accordingly, it is possible to facilitatesignal processing performed on a later-stage circuit.

4. Exemplary Pixel Structure According to Third Embodiment

FIG. 10 is a cross-sectional view illustrating a pixel structure of thesolid-state imaging device 1 according to a third embodiment.

The configuration in a plan view is the same as the configuration inFIG. 6 . FIG. 10 illustrates a pixel structure taken along line A-A′ inFIG. 6 .

The structure illustrated in FIG. 10 differs from the structure in FIG.9 in that not only the lower electrode 51A-1 but also the lowerelectrode 51A-2, of the phase difference pixel 2PA, is connected to thecharge accumulation unit 62 and that not only the lower electrode 51B-2but also the lower electrode 51B-1, of the phase difference pixel 2PB,is connected to the charge accumulation unit 62.

The lower electrode 51A-1 of the phase difference pixel 2PA is connectedto a charge accumulation unit 62-1 via metal wiring 72-1. In addition,the lower electrode 51A-2 is connected to a charge accumulation unit62-2 via metal wiring 72-2.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PA, the signal charge collected by thelower electrode 51A-1 is accumulated onto the charge accumulation unit62-1, and the signal charge collected by the lower electrode 51A-2 isaccumulated onto the charge accumulation unit 62-2.

Meanwhile, the lower electrode 51B-1 of the phase difference pixel 2PBis connected to the charge accumulation unit 62-1 via the metal wiring72-1. The lower electrode 51B-2 is connected to the charge accumulationunit 62-2 via the metal wiring 72-2.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PB, the signal charge collected by thelower electrode 51B-1 is accumulated onto the charge accumulation unit62-1, and the signal charge collected by the lower electrode 51B-2 isaccumulated onto the charge accumulation unit 62-2.

In this manner, although on the phase difference pixel 2P in FIG. 10 ,the lower electrodes divided and arranged within a same pixel areconnected to the charge accumulation unit 62, the lower electrodes thatsupply phase difference signals used for phase difference detection arenot the same.

Specifically, the phase difference pixel 2PA outputs a signalcorresponding to the signal charge collected by the lower electrode51A-1 and accumulated in the charge accumulation unit 62-1, and outputsa signal corresponding to the signal charge collected by the lowerelectrode 51A-2 and accumulated in the charge accumulation unit 62-2.However, the latter signal, for example, is not used for phasedifference detection.

The signal corresponding to the signal charge accumulated in the chargeaccumulation unit 62-2 of the phase difference pixel 2PA is discarded ata circuit provided outside the solid-state imaging device 1, forexample, the circuit that performs phase difference detection in thelater stage. Alternatively, it is allowable to configure such that thesignal charge accumulated in the charge accumulation unit 62-2 isdiscarded within the solid-state imaging device 1.

Similarly, the phase difference pixel 2PB outputs a signal correspondingto the signal charge collected by the lower electrode 51B-1 andaccumulated in the charge accumulation unit 62-1, and outputs a signalcorresponding to the signal charge collected by the lower electrode51B-2 and accumulated in the charge accumulation unit 62-2. However, theformer signal, for example, is not used for phase difference detection.

The signal corresponding to the signal charge accumulated in the chargeaccumulation unit 62-1 of the phase difference pixel 2PB is discarded ata circuit that performs phase difference detection in the later stage,for example. Alternatively, it is allowable to configure such that thesignal charge accumulated in the charge accumulation unit 62-1 isdiscarded within the solid-state imaging device 1.

The lower electrodes used for phase difference detection are left-rightinverted between the phase difference pixel 2PA and the phase differencepixel 2PB. The lower electrode used for phase difference detection onthe phase difference pixel 2PA is the lower electrode 51A-1 formed onthe left side of the phase difference pixel 2PA, and the lower electrodeused for phase difference detection on the phase difference pixel 2PB isthe lower electrode 51B-2 formed on the right side of the phasedifference pixel 2PB.

Since the lower electrodes that contribute to phase difference detectionare arranged to be formed in different regions, it is possible to obtainincident angle characteristics of the sensitivity, that differ in thepixel pair of the phase difference pixel 2PA and the phase differencepixel 2PB. As a result, it is possible to obtain a phase differencesignal.

With this arrangement, similarly to a case where the structureillustrated in FIG. 9 according the second embodiment is employed, it ispossible to enhance sensitivity to the light with a large incident angleand to enhance accuracy to detect a phase difference.

Moreover, since it is possible to discharge the signal charge collectedby the lower electrode that is not used for phase difference detection,onto the charge accumulation unit, stable output of the phase differencesignal can be achieved. For example, if the signal charge collected bythe lower electrode 51A-2 of the phase difference pixel 2PA was notdischarged to the charge accumulation unit, capacitive coupling mightoccur and potential variation in the lower electrode 51A-2 might causepotential variation in the adjacent lower electrode 51A-1. However, withthe above-described arrangement, it is possible to suppress suchvariation. In some cases, a leakage current might occur between thelower electrode 51A-2 that has collected signal charge, and the upperelectrode 82. Even in this case, it is possible to prevent occurrence ofsuch a leakage current.

5. Exemplary Pixel Structure According to Fourth Embodiment

FIG. 11 is a plan view illustrating a form of a lower electrode of thesolid-state imaging device 1 according to a fourth embodiment.

Among the components illustrated in FIG. 11 , the componentcorresponding to the above-described component is provided with a samereference sign. Overlapping description will be appropriately omitted.The configuration illustrated in FIG. 11 differs from the configurationillustrated in FIG. 6 mainly in that the areas in a plan view of thelower electrodes of the phase difference pixel 2P, formed in two dividedportions, differ from each other.

As illustrated in FIG. 11 , the lower electrode of the phase differencepixel 2PA includes the lower electrode 51A-1, the lower electrode 51A-2,and the lower electrode separating section 51A-3. The lengths of thelower electrode 51A-1 and the lower electrode 51A-2 in the verticaldirection are the same, although the lengths in the horizontal directiondiffer from each other, that is, the lower electrode 51A-2 has a longerlength in the horizontal direction. The area of the lower electrode51A-2 is larger than the area of the lower electrode 51A-1. The lowerelectrode 51A-2 having a larger area is the lower electrode that is notused for phase difference detection.

The lower electrode separating section 51A-3 with a small width isformed at a position biased toward the left side from the vertical axisrepresented by line B-B′, passing through the center of the phasedifference pixel 2PA.

Similarly, the lower electrode of the phase difference pixel 2PBincludes a lower electrode 51B-1, a lower electrode 51B-2, and a lowerelectrode separating section 51B-3. The lengths of the lower electrode51B-1 and the lower electrode 51B-2 in the vertical direction are thesame, although the lengths in the horizontal direction differ from eachother, that is, the lower electrode 51B-1 has a longer length in thehorizontal direction. The area in a plan view of the lower electrode51B-1 is larger than the area in the plan view of the lower electrode51B-2. The lower electrode 51B-1 having a larger area is the lowerelectrode that is not used for phase difference detection.

The lower electrode separating section 51B-3 with a small width isformed at a position biased toward the right side from the vertical axispassing through the center of the phase difference pixel 2PB.

When the lower electrode separating section 51A-3 is assumed to beincluded in a lower electrode region, the area in a plan view of thelower electrode formed on the phase difference pixel 2PA is larger thanthe area of the lower electrode 51C formed on the imaging pixel 2X. Thisis also applicable to the lower electrode formed on the phase differencepixel 2PB.

FIG. 12 is a cross-sectional view illustrating a pixel structure takenalong line A-A′ in FIG. 11 .

Among the components illustrated in FIG. 12 , the componentcorresponding to the above-described component is provided with a samereference sign. Overlapping description will be appropriately omitted.The configuration illustrated in FIG. 12 differs from the configurationillustrated in FIG. 10 in that the length, in the horizontal direction,of the lower electrodes of the phase difference pixel 2P, formed in twodivided portions, differ from each other.

The lower electrode 51A-1 of the phase difference pixel 2PA is connectedto a charge accumulation unit 62-1 via metal wiring 72-1. The lowerelectrode 51A-2 is connected to the charge accumulation unit 62-2 viathe metal wiring 72-2.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PA, the signal charge collected by thelower electrode 51A-1 is accumulated onto the charge accumulation unit62-1, and the signal charge collected by the lower electrode 51A-2 isaccumulated onto the charge accumulation unit 62-2.

Specifically, the phase difference pixel 2PA outputs a signalcorresponding to the signal charge accumulated in the chargeaccumulation unit 62-1, and outputs a signal corresponding to the signalcharge accumulated in the charge accumulation unit 62-2. However, thelatter signal, for example, is not used for phase difference detection.

Meanwhile, the lower electrode 51B-1 of the phase difference pixel 2PBis connected to the charge accumulation unit 62-1 via the metal wiring72-1. The lower electrode 51B-2 is connected to the charge accumulationunit 62-2 via the metal wiring 72-2.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PB, the signal charge collected by thelower electrode 51B-1 is accumulated onto the charge accumulation unit62-1, and the signal charge collected by the lower electrode 51B-2 isaccumulated onto the charge accumulation unit 62-2.

Specifically, the phase difference pixel 2PB outputs a signalcorresponding to the signal charge accumulated in the chargeaccumulation unit 62-1, and outputs a signal corresponding to the signalcharge accumulated in the charge accumulation unit 62-2. However, theformer signal, for example, is not used for phase difference detection.

FIG. 13 is a diagram illustrating an exemplary output voltagecharacteristic with respect to an incident angle of light.

The graph on the left side in FIG. 13 , as indicated on its upperportion, illustrates a characteristic in a case where the separatingsection of the lower electrode is formed to pass through the center ofthe phase difference pixel 2P. The phase difference pixel 2P, for whichan output voltage characteristic is illustrated in FIG. 13 , hassensitivity toward the light with an incident angle in the negativedirection.

In contrast, the graph on the right side in FIG. 13 , as indicated onits upper portion, illustrates a characteristic in a case where theseparating section of the lower electrode is formed to pass through aposition biased toward the left side with respect to the center of thephase difference pixel 2P. In this case, as indicated with an open arrowon the graph, the curved line indicating the output voltage shifts so asto have higher sensitivity toward the light with the incident angle inmore negative direction. For example, an output voltage characteristicfor the phase difference pixel 2PA in FIG. 11 is the characteristicillustrated in the graph illustrated on the right side in FIG. 13 .

FIG. 14 is a diagram illustrating a characteristic of an output voltageafter standardization, of each of the phase difference pixel 2PA and thephase difference pixel 2PB, illustrated in FIG. 11 .

The curved lines #21 and #22 each illustrates a characteristic in a casewhere the separating section of the lower electrode is formed to passthrough the center of the phase difference pixel 2P. The curved lines#31 and #32 each illustrates a characteristic in a case where theseparating section of the lower electrode is formed to pass through aposition biased with respect to the center of the phase difference pixel2P. The curved line #31 indicates a characteristic of the phasedifference pixel 2PA illustrated in FIG. 11 , having sensitivity towardthe light with an incident angle in the negative direction. The curvedline #32 indicates a characteristic of the phase difference pixel 2PBillustrated in FIG. 11 , having sensitivity toward the light having anincident angle in the positive direction.

By forming the lower electrode so as to allow the separating section tobe biased and then shifting the output voltage characteristic, asillustrated by an open arrow, it is possible to lower the output voltagewhen the incident angle is 0°, and to ensure large sensitivity changewhen the incident angle is changed. As a result, it is possible toenhance phase difference detection accuracy when the incident angle ischanged.

In this manner, when the configuration illustrated in FIGS. 11 and 12according to the fourth embodiment is employed, it is possible to obtainthe effects similar to the case where the configuration in FIG. 10according to the third embodiment is employed. Moreover, it is possibleto enhance phase difference detection accuracy when the incident angleis changed.

It is also possible to use a configuration without connecting the lowerelectrodes 51A-2 and 51B-1 being lower electrodes that are not used forphase difference detection, with the charge accumulation unit.

6. Exemplary Pixel Structure According to Fifth Embodiment

FIG. 15 is a plan view illustrating a form of the lower electrode of thesolid-state imaging device 1 according to a fifth embodiment.

Among the components illustrated in FIG. 15 , the componentcorresponding to the above-described component is provided with a samereference sign. Overlapping description will be appropriately omitted.The configuration illustrated in FIG. 15 differs from the configurationillustrated in FIG. 6 mainly in that the lower electrode that is notused for phase difference detection is connected to the metal wiring asa signal charge discharge section. The metal wiring is connected to afixed voltage within the solid-state imaging device 1, for example, toGND.

As illustrated in FIG. 15 , metal wiring 111A with a small width isprovided between the phase difference pixel 2PA and the imaging pixel 2Xprovided on the right side of the phase difference pixel 2PA. The lowerelectrode 51A-2 of the phase difference pixel 2PA is connected, via acontact hole 122A, to a connecting section 121A protruding as a portionof the metal wiring 111A in the left direction. The signal chargecollected by the lower electrode 51A-2 is discharged onto the metalwiring 111A without being used for output of a phase difference signal.

In addition, metal wiring 111B with a small width is provided betweenthe phase difference pixel 2PB and the imaging pixel 2X provided on theleft side of the phase difference pixel 2PB. The lower electrode 51B-1of the phase difference pixel 2PB is connected, via a contact hole 122B,to a connecting section 121B protruding as a portion of the metal wiring111B in the right direction. The signal charge collected by the lowerelectrode 51B-1 is discharged onto the metal wiring 111B without beingused for output of a phase difference signal.

FIG. 16 is a cross-sectional view illustrating a pixel structure takenalong line A-A′ in FIG. 15 .

Among the components illustrated in FIG. 16 , the componentcorresponding to the above-described component is provided with a samereference sign. Overlapping description will be appropriately omitted.

The lower electrodes 51A-1 and 51A-2 are provided on the phasedifference pixel 2PA. The lower electrode 51A-lis connected to thecharge accumulation unit 62 via the metal wiring 72-1 to 72-3. In anexample in FIG. 16 , metal wiring configured to connect the lowerelectrode and the charge accumulation unit is formed with the metalwiring 72-1 to 72-3. The metal wiring 72-3 has a width greater than themetal wiring 72-1 positioned above the metal wiring 72-3, and greaterthan the metal wiring 72-2 positioned below the metal wiring 72-3. In anexample in FIG. 16 , the lower electrode 51C and the charge accumulationunit 62, of the imaging pixel 2X, are connected with each other in asimilar manner.

The lower electrode 51A-2 of the phase difference pixel 2PA isconnected, via the contact hole 122A, to the connecting section 121Aintegrally formed with the metal wiring 111A. The metal wiring 111A isformed on a layer below the layer of the lower electrode 51A-2.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PA, the signal charge collected by thelower electrode 51A-1 is accumulated onto the charge accumulation unit62, and the signal charge collected by the lower electrode 51A-2 isdischarged onto the metal wiring 111A.

The lower electrodes 51B-1 and 51B-2 are provided on the phasedifference pixel 2PB. The lower electrode 51B-1 is connected, via thecontact hole 122B, to the connecting section 121B integrally formed withthe metal wiring 111B. The metal wiring 111B is formed on a layer belowthe layer of the lower electrode 51B-1. The lower electrode 51B-2 isconnected to the charge accumulation unit 62 via the metal wiring 72-1to 72-3.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PB, the signal charge collected by thelower electrode 51B-2 is accumulated onto the charge accumulation unit62, and the signal charge collected by the lower electrode 51B-1 isdischarged onto the metal wiring 111B.

In this manner, when the configuration illustrated in FIGS. 15 and 16according to the fifth embodiment is employed, it is possible to obtainthe effects similar to the case where the configuration in FIG. 10according to the third embodiment is employed. Furthermore, it is notnecessary to provide two charge accumulation units for the phasedifference pixel 2P within the semiconductor substrate 61, and thus, itis possible to enhance flexibility of layout when elements are arrangedwithin the semiconductor substrate 61.

Alternatively, it is also allowable to form the lower electrode of thephase difference pixel 2P, as described with reference to FIG. 11 , tobe separated at a position biased with respect to a vertical axis as areference passing through the center of the phase difference pixel 2P.It is also possible to provide the metal wiring as a signal chargedischarging section between the phase difference pixel 2P and itsadjacent imaging pixel 2X, in the horizontal direction.

7. Exemplary Pixel Structure According to Sixth Embodiment

FIG. 17 is a plan view illustrating a form of a lower electrode of thesolid-state imaging device 1 according to a sixth embodiment.

Among the components illustrated in FIG. 17 , the componentcorresponding to the above-described component is provided with a samereference sign. Overlapping description will be appropriately omitted.The configuration illustrated in FIG. 17 differs from the configurationillustrated in FIG. 6 mainly in that the lower electrode that is notused for phase difference detection is connected to an inter-pixelelectrode formed of a material that is the same as the material of thelower electrode.

As illustrated in FIG. 17 , an inter-pixel electrode 131 with a smallwidth is formed so as to enclose the pixel 2. Within the solid-stateimaging device 1, the inter-pixel electrode 131 is connected to a fixedvoltage, for example GND.

The lower electrode 51A-2 of the phase difference pixel 2PA is connectedto a portion of the inter-pixel electrode 131, formed on a boundarybetween the phase difference pixel 2PA and the adjacent imaging pixel 2Xon the right of the phase difference pixel 2PA, via a lower electrodeextending portion 132A. The lower electrode 51A-2 is integrally formedwith the inter-pixel electrode 131 and the lower electrode extendingportion 132A. The length of the lower electrode extending portion 132Ain the vertical direction is equal to the length of the lower electrode51A-2 in the vertical direction. The signal charge collected by thelower electrode 51A-2 is discharged onto the inter-pixel electrode 131without being used for output of a phase difference signal.

The lower electrode 51B-1 of the phase difference pixel 2PB isconnected, via a lower electrode extending portion 132B, to a portion ofthe inter-pixel electrode 131 formed on a boundary between the phasedifference pixel 2PB and the adjacent imaging pixel 2X on the left sideof the phase difference pixel 2PB. The lower electrode 51B-1 isintegrally formed with the inter-pixel electrode 131 and the lowerelectrode extending portion 132B. The length of the lower electrodeextending portion 132B in the vertical direction is equal to the lengthof the lower electrode 51B-1 in the vertical direction. The signalcharge collected by the lower electrode 51B-1 is discharged onto theinter-pixel electrode 131 without being used for output of a phasedifference signal.

When the lower electrode separating section 51A-3 is assumed to beincluded in a lower electrode region, the area in a plan view of thelower electrode formed on the phase difference pixel 2PA is larger thanthe area in the plan view of the lower electrode 51C formed on theimaging pixel 2X. This is also applicable to the lower electrode formedon the phase difference pixel 2PB.

FIG. 18 is a cross-sectional view illustrating a pixel structure takenalong line A-A′ in FIG. 17 .

Among the components illustrated in FIG. 18 , the componentscorresponding to the components illustrated in FIG. 10 are provided withsame reference signs. Overlapping description will be appropriatelyomitted.

The lower electrodes 51A-1 and 51A-2 are provided on the phasedifference pixel 2PA. The lower electrode 51A-2 is connected, via alower electrode extending portion 132A, to a portion of the inter-pixelelectrode 131, formed on a boundary between oneself and the adjacentimaging pixel 2X on the right. The inter-pixel electrode 131 and thelower electrode extending portion 132A are integrally formed on a samelayer, using the material same as the material of the lower electrode51A-2.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PA, the signal charge collected by thelower electrode 51A-1 is accumulated onto the charge accumulation unit62, and the signal charge collected by the lower electrode 51A-2 isdischarged onto the inter-pixel electrode 131.

The lower electrodes 51B-1 and 51B-2 are provided on the phasedifference pixel 2PB. The lower electrode 51B-lis connected, via a lowerelectrode extending portion 132B, to a portion of the inter-pixelelectrode 131, formed on a boundary between oneself and the adjacentimaging pixel 2X on the left. The inter-pixel electrode 131 and thelower electrode extending portion 132B are integrally formed on a samelayer, using the material same as the material of the lower electrode51B-1.

Among the signal charges obtained by photoelectric conversion performedon the phase difference pixel 2PB, the signal charge collected by thelower electrode 51B-2 is accumulated onto the charge accumulation unit62, and the signal charge collected by the lower electrode 51B-1 isdischarged onto the inter-pixel electrode 131.

In this manner, when the configuration illustrated in FIGS. 17 and 18according to the sixth embodiment is employed, it is possible to obtainthe effects similar to the case where the configuration in FIGS. 15 and16 according to the fifth embodiment is employed. In addition, sincethere is no need to form metal wiring between the pixels 2, it is notnecessary to provide steps to form the metal wiring.

Note that the inter-pixel electrode 131 is also used for discharging thesignal charge generated between the pixels. Since the photoelectricconversion film 81 is formed across the pixels 2, a signal charge isgenerated even between the pixels.

Alternatively, it is also allowable to form the lower electrode of thephase difference pixel 2P, as described with reference to FIG. 11 , tobe separated at a position biased with respect to a vertical axispassing through the center of the phase difference pixel 2P.

8. Exemplary Pixel Structure According to Seventh Embodiment

FIG. 19 is a plan view illustrating a form of a lower electrode of thesolid-state imaging device 1 according to a seventh embodiment.

Among the components illustrated in FIG. 19 , the componentscorresponding to the components illustrated in FIG. 17 are provided withsame reference signs. Overlapping description will be appropriatelyomitted. The configuration illustrated in FIG. 19 differs from theconfiguration illustrated in FIG. 17 mainly in that the direction ofdividing and arranging the lower electrode of the phase difference pixel2P is the vertical direction.

A substantially horizontally-long rectangular lower electrode 51A-1 isprovided on the phase difference pixel 2PA. On the cross-sectional viewof the phase difference pixel 2PA, the lower electrode 51A-1 isconnected to the charge accumulation unit 62 via the metal wiring 72.

On the phase difference pixel 2PA, the lower electrode 51A-2 is formedbelow the lower electrode 51A-1, separated from the lower electrode51A-1. The lower electrode 51A-2 is connected to a portion of theinter-pixel electrode 131, formed on a boundary between the phasedifference pixel 2PA and the adjacent imaging pixel 2X below the phasedifference pixel 2PA, via the lower electrode extending portion 132A.

The lower electrode 51A-2, the inter-pixel electrode 131, and the lowerelectrode extending portion 132A are integrally formed with each other.The length of the lower electrode extending portion 132A in thehorizontal direction is equal to the length of the lower electrode 51A-2in the horizontal direction. The signal charge collected by the lowerelectrode 51A-2 is discharged onto the inter-pixel electrode 131 withoutbeing used for output of a phase difference signal.

A substantially horizontally-long rectangular lower electrode 51B-2 isprovided on the phase difference pixel 2PB. On the cross-sectional viewof the phase difference pixel 2PB, the lower electrode 51B-2 isconnected to the charge accumulation unit 62 via the metal wiring 72.

On the phase difference pixel 2PB, the lower electrode 51B-1 is formedabove the lower electrode 51B-2, separated from the lower electrode51B-2. The lower electrode 51B-1 is connected to a portion of theinter-pixel electrode 131, formed on a boundary between the phasedifference pixel 2PB and the adjacent imaging pixel 2X above the phasedifference pixel 2PB, via the lower electrode extending portion 132B.

The lower electrode 51B-1, the inter-pixel electrode 131, and the lowerelectrode extending portion 132B are integrally formed with each other.The length of the lower electrode extending portion 132B in thehorizontal direction is equal to the length of the lower electrode 51B-1in the horizontal direction. The signal charge collected by the lowerelectrode 51B-1 is discharged onto the inter-pixel electrode 131 withoutbeing used for output of a phase difference signal.

In this manner, when the configuration illustrated in FIG. 19 accordingto the seventh embodiment is employed, it is possible to obtain theeffects similar to the case where the configuration in FIGS. 17 and 18according to the sixth embodiment is employed. Moreover, since the lowerelectrodes of the phase difference pixel 2P are arranged to be separatedinto up-down directions, it is possible to accurately detect a phasedifference in a case where the optical axis of the incident lightchanges in the up-down direction.

9. Modification

As described with reference to FIG. 19 , dividing and arranging thelower electrode of the phase difference pixel 2P in the up-downdirections can be applied to the configuration of the lower electrode ofthe phase difference pixel 2P in the second to fifth embodiments.Alternatively, it is also allowable to divide and arrange the lowerelectrode of the phase difference pixel 2P in the diagonal direction(oblique direction).

Furthermore, it is also allowable to arrange within the pixel array unit3, by mixing the phase difference pixel 2P having a lower electrodedivided and arranged in the horizontal direction, the phase differencepixel 2P having a lower electrode divided and arranged in the verticaldirection, and a phase difference pixel having a lower electrode dividedand arranged in the diagonal direction.

In this manner, arrangement positions and forms of the lower electrodeswithin the phase difference pixel 2P are not limited. It would besufficient that, within the phase difference pixel 2P, the lowerelectrode regions are asymmetrical with respect to the optical axis ofthe incident light and that the lower electrodes of the pair of phasedifference pixels 2PA are arranged at symmetrical positions with eachother.

Additionally, in the above description, the lower electrodes areseparately provided for each of the pixels and the upper electrode isformed across all the pixels. Alternatively, it is also possible toreverse this configuration such that the upper electrodes are separatelyprovided for each of the pixels and the lower electrode is formed acrossall the pixels. In this case, the upper electrodes are arranged in theabove-described manner.

For example, in a case where the upper electrode of the phase differencepixel 2P is arranged in a manner illustrated in FIG. 6 , any of thedivided upper electrodes is connected to the charge accumulation unit62. The signal charge obtained by performing photoelectric conversion iscollected onto the upper electrode that is used for phase differencedetection, transferred to and accumulated in the charge accumulationunit 62.

In this manner, it is also possible to use the upper electrode as theelectrode that is arranged on the output side of the signal charge andthat is divided for each of the pixels. By separating and forming theupper electrode for each of the pixels and forming the lower electrodeacross all the pixels, it is also possible to achieve theabove-described effects.

Exemplary Application to Electronic Apparatus

The above-described solid-state imaging device 1 can be applied, forexample, to various electronic apparatuses including imaging devicessuch as a digital still camera and a digital video camera, a mobilephone having an imaging function, or an audio player having an imagingfunction.

FIG. 20 is a block diagram illustrating an exemplary configuration of asolid-state imaging device.

An imaging device 201 includes an optical unit 211, a solid-stateimaging device 214, a control circuit 215, a signal processing circuit216, a monitor 217, and a memory 218. The imaging device 201 is anelectronic apparatus capable of imaging a still image and a movingimage.

The optical unit 211 includes one or more image-forming lenses 212 andan aperture stop 213, guides light (incident light) from an object tothe solid-state imaging device 214, and forms an image on alight-receiving plane of the solid-state imaging device 214.

The solid-state imaging device 214 includes the above-describedsolid-state imaging device 1. The solid-state imaging device 214accumulates a signal charge for a fixed period of time according to thelight that forms an image on the light-receiving plane through theimage-forming lens 212 and the aperture stop 213. The signal chargeaccumulated in the solid-state imaging device 214 is transferredaccording to a drive signal (timing signal) supplied from the controlcircuit 215. The solid-state imaging device 214 may be formed as aone-chip device or a portion of a camera module packaged with theoptical unit 211, the signal processing circuit 216, or the like.

The control circuit 215 outputs a drive signal that controls transferoperation and shutter operation of the solid-state imaging device 214and drives the solid-state imaging device 214. The control circuit 215also adjusts the image-forming lens 212 and the aperture stop 213 of theoptical unit 211 on the basis of a pixel signal (phase difference signalor imaging signal) obtained from the solid-state imaging device 214.

The signal processing circuit 216 performs various signal processingfunctions on the pixel signal output from the solid-state imaging device214. The image (image data) obtained by the signal processing performedby the signal processing circuit 216 is supplied to and displayed on themonitor 217, or supplied to and stored (recorded) in the memory 218.

As described above, by employing the solid-state imaging device 1according to the above-described embodiments, as the solid-state imagingdevice 214, it is possible to detect a phase difference with highsensitivity. As a result, it is possible to enhance autofocus accuracy.Accordingly, it is also possible to enhance image quality of thecaptured image on a video camera, a digital still camera, and on theimaging device 201 including a camera module for mobile devices such asa mobile phone.

Exemplary Substrate Configuration of Solid-State Imaging Device

The solid-state imaging device 1 includes a semiconductor substrateincluding, as illustrated in FIG. 21A, a pixel region 221 on which theplurality of pixels 2 are arranged, a control circuit 222 that controlsthe pixel 2, and a logic circuit 223 that includes a signal processingcircuit for pixel signals.

Alternatively, the solid-state imaging device 1 may be configured toinclude a stack structure that stacks, as illustrated in FIG. 21B, afirst semiconductor substrate including the pixel region 221 and thecontrol circuit 222, and a second semiconductor substrate including thelogic circuit 223. The first semiconductor substrate is electricallyconnected with the second semiconductor substrate via, for example, apenetration via and Cu—Cu metallic bond.

Alternatively, the solid-state imaging device 1 may be configured tohave a stack structure that stacks, as illustrated in FIG. 21C, a firstsemiconductor substrate including uniquely the pixel region 221, and asecond semiconductor substrate including the control circuit 222 and thelogic circuit 223. The first semiconductor substrate is electricallyconnected with the second semiconductor substrate via, for example, apenetration via and Cu—Cu metallic bond.

Exemplary Application of Solid-State Imaging Device 1

FIG. 22 is a diagram illustrating exemplary applications of thesolid-state imaging device 1.

The solid-state imaging device 1 is applicable to various situations inwhich sensing is performed for light including visual light, infraredlight, ultraviolet light, and X-ray. Examples of such situations aredescribed as follows.

-   -   A device for capturing an image for entertainment, such as a        digital camera and a mobile phone with a camera function.    -   A device for transportation, such as an on-vehicle sensor that        images a front, back, surroundings, interior, or the like, of a        vehicle in order to ensure safe driving including automatic        stop, and to recognize driver's conditions, a monitor camera to        monitor driving vehicles and roads, and a range-finding sensor        to perform measurement of a distance between vehicles, or the        like.    -   A device for household appliances including a TV, a        refrigerator, and an air conditioner, to image user's gesture        and perform operation of the apparatus according to the gesture.    -   A device for medical and health care fields, such as an        endoscope, and a device for angiography using reception of        infrared light.    -   A device for security, such as a monitor camera for crime        prevention, and a camera for personal authentication.    -   A device for beauty, such as a skin measuring instrument to        image the skin, and a microscope to image the scalp.    -   A device for sports, such as an action camera and a wearable        camera for sports.    -   A device for agriculture, such as a camera to monitor states of        fields and farm products.

Embodiments of the present technology are not limited to theabove-described embodiments but can be modified in a variety of wayswithin a scope of the present technology. For example, it is possible toemploy all of the above-described plurality of embodiments, or anembodiment combining a part of the embodiments.

Exemplary Combination of Configurations

The present disclosure can be configured as follows.

(1)

A solid-state imaging device including:

-   -   an imaging pixel that includes an upper electrode and a lower        electrode that sandwich a photoelectric conversion film and that        is used for obtaining an imaging signal; and    -   a phase difference pixel that includes the upper electrode and        the lower electrode and that is used for obtaining a phase        difference detection signal,    -   wherein an area of one of the electrodes that is on an output        side of a signal charge and that is divided and provided for        each of pixels among the upper electrode and the lower electrode        provided on the phase difference pixel is larger than an area of        the one of the electrodes among the upper electrode and the        lower electrode provided on the imaging pixel.        (2)

The solid-state imaging device according to (1), further including alight shielding film to limit incident light on top of the photoelectricconversion film of the phase difference pixel.

(3)

The solid-state imaging device according to (1), wherein the one of theelectrodes of the phase difference pixel includes a first electrode, asecond electrode, and a separating section that separates the firstelectrode from the second electrode.

(4)

The solid-state imaging device according to (3), wherein the separatingsection passes through the center of the phase difference pixel.

(5)

The solid-state imaging device according to (3) or (4), wherein, on thephase difference pixel, the area of the first electrode and the area ofthe second electrode are equal to each other.

(6)

The solid-state imaging device according to (3), wherein the separatingsection is formed at a position biased from the center of the phasedifference pixel.

(7)

The solid-state imaging device according to (6), wherein, on the phasedifference pixel, the area of the first electrode is smaller than thearea of the second electrode.

(8)

The solid-state imaging device according to any of (3) to (7), wherein,the first electrode of the phase difference pixel is connected to acharge accumulation unit that is formed on a semiconductor substrate andis configured to accumulate a signal charge and output a phasedifference signal to an outside.

(9)

The solid-state imaging device according to any of (3) to (8), whereinthe second electrode on the phase difference pixel is connected to acharge discharge unit.

(10)

The solid-state imaging device according to (9), wherein the chargedischarge unit includes metal wiring formed between the phase differencepixel and an adjacent pixel.

(11)

The solid-state imaging device according to (9), wherein the chargedischarge unit is configured integrally with the second electrode byusing a material same as the material of the first electrode and thesecond electrode, between the phase difference pixel and the adjacentpixel.

(12)

An electronic apparatus including a solid-state imaging deviceincluding:

-   -   an imaging pixel that includes an upper electrode and a lower        electrode that sandwich a photoelectric conversion film and that        is used for obtaining an imaging signal; and    -   a phase difference pixel that includes the upper electrode and        the lower electrode and that is used for obtaining a phase        difference detection signal,    -   wherein an area of one of the electrodes that is on an output        side of a signal charge and that is divided and provided for        each of pixels among the upper electrode and the lower electrode        provided on the phase difference pixel is larger than an area of        the one of the electrodes among the upper electrode and the        lower electrode provided on the imaging pixel.        (13)

An imaging device, comprising:

-   -   a first pixel of a first pixel type, wherein the first pixel        type is for phase difference detection, the first pixel        including: a first electrode;    -   a first portion of a photoelectric conversion film; and    -   a first portion of a second electrode, wherein the first portion        of the photoelectric conversion film is between the first        electrode and the first portion of the second electrode, and        wherein the first electrode of the first pixel has a first area;        and    -   a second pixel of a second pixel type, wherein the second pixel        type is for imaging, the second pixel including:    -   a first electrode;    -   a second portion of the photoelectric conversion film; and    -   a second portion of the second electrode, wherein the second        portion of the photoelectric conversion film is between the        first electrode and the second portion of the second electrode,        wherein the first electrode of the second pixel has a second        area, and wherein the first area is larger than the second area        in a plan view.        (14)

The imaging device of (13), further comprising:

-   -   a light shielding film, wherein the light shielding film is        adjacent at least a portion of the first electrode of the first        pixel.        (15)

The imaging device of (14), further comprising:

-   -   an interlayer insulating film, wherein at least a portion of the        interlayer insulating film is between the light shielding film        and the first electrode of the first pixel.        (16)

The imaging device of any of (13) to (15), further comprising: a firstcharge accumulation unit, wherein the first electrode of the first pixelis connected to the first charge accumulation unit;

-   -   a second charge accumulation unit, wherein the first electrode        of the second pixel is connected to the second charge        accumulation unit.        (17)

The imaging device of any of (13) to (16), wherein the first electrodeof the first pixel and the first electrode of the second pixel are lowerelectrodes, and wherein the first portion of the second electrode of thefirst pixel and the second portion of the second electrode of the secondpixel are upper electrodes.

(18)

The imaging device of (13), wherein the first electrode of the firstpixel is divided into a first portion and a second portion, wherein thefirst portion of the first electrode is separated from the secondportion of the first electrode.

(19)

The imaging device of (18), wherein the first portion of the firstelectrode is separated from the second portion of the second electrodeby a separating section, and wherein the first area of the firstelectrode of the first pixel includes the first portion of the firstelectrode, the second portion of the first electrode, and the separatingsection.

(20)

The imaging device of (18) or (19), wherein the first portion of thefirst electrode is separated from the second portion of the secondelectrode by a separating section, and wherein the first area of thefirst electrode of the first pixel includes the first portion of thefirst electrode, the second portion of the first electrode, and theseparating section.

(21)

The imaging device of any of (18) to (21), wherein an area of the firstportion of the first electrode of the first pixel is different than anarea of the second portion of the first electrode of the first pixel.

(22)

The imaging device of any of (18) to (21), further comprising: a firstcharge accumulation unit, wherein the first portion of the firstelectrode of the first pixel is connected to the first chargeaccumulation unit.

(23)

The imaging device of any of (18) to (22), wherein the second portion ofthe first electrode of the first pixel is connected to ground.

(24)

The imaging device of any of (18) to (23), wherein an area of the firstportion of the first electrode of the first pixel is smaller than anarea of the second portion of the first electrode of the first pixel.

(25)

The imaging device of any of (18) to (21) or (24), further comprising:

-   -   a first charge accumulation unit, wherein the first portion of        the first electrode of the first pixel is connected to the first        charge accumulation unit;    -   a second charge accumulation unit, wherein the second portion of        the first electrode of the first pixel is connected to the        second charge accumulation unit;    -   a third charge accumulation unit, wherein the first electrode of        the second pixel is connected to the third charge accumulation        unit.        (26)

The imaging device of any of (18) to (25), further comprising: aninterpixel electrode, wherein the interpixel electrode encloses thefirst and second pixels, and wherein the second portion of the firstelectrode of the first pixel is connected to the interpixel electrode.

(27)

The imaging device of (26), wherein the second portion of the firstelectrode of the first pixel is connected to the interpixel electrode byan electrode extending portion that is integral to and formed from asame material as the second portion of the first electrode of the firstpixel and the interpixel electrode.

(28)

The imaging device of any of (18) to (27), wherein the first and secondportions of the first electrode of the first pixel are separated fromone another in a vertical direction, and wherein a length of theelectrode extending portion in the vertical direction is equal to alength of the second portion of the first electrode of the first pixelin the vertical direction.

(29)

The imaging device of any of (26) to (28), wherein the interpixelelectrode is connected to one of ground or a voltage source.

(30)

The imaging device any of (13) to (17), further comprising:

-   -   a plurality of first pixels;    -   a plurality of second pixels, wherein the first electrode of        each of the first pixels is divided into a first portion and a        second portion.        (31)

The imaging device of any of (18) to (29), wherein the first portion ofthe first electrode of the first pixel is electrically separated fromthe second portion of the first electrode of the first pixel.

(32)

An imaging device, comprising:

-   -   a first pixel of a first pixel type, including:    -   a first electrode, wherein the first electrode is divided into a        first portion and a second portion, wherein the first portion of        the electrode is separated from the second portion of the first        electrode;    -   a first portion of a photoelectric conversion film; and    -   a first portion of a second electrode, wherein the first portion        of the photoelectric conversion film is between the first        electrode and the first portion of the second electrode, and        wherein the first electrode of the first pixel has a first area;        and    -   a second pixel of a second pixel type, including:    -   a first electrode;    -   a second portion of the photoelectric conversion film; and    -   a second portion of the second electrode, wherein the second        portion of the photoelectric conversion film is between the        first electrode and the second portion of the second electrode,        wherein the first electrode of the second pixel has a second        area, and wherein the first area is larger than the second area        in a plan view.        (33)

The imaging device of (32), wherein the first portion of the firstelectrode is separated from the second portion of the second electrodeby a separating section, and wherein the first area of the firstelectrode of the first pixel includes the first portion of the firstelectrode, the second portion of the first electrode, and the separatingsection.

(34)

The imaging device of (32) or (33), wherein a sum of an area of thefirst portion of the first electrode of the first pixel and an area ofthe second portion of the first electrode of the first pixel is equal tothe second area.

(35)

The imaging device of any of (32) to (34), wherein an area of the firstportion of the first electrode of the first pixel is different than anarea of the second portion of the first electrode of the first pixel.

(36)

The imaging device of any of (32) to (35), further comprising: a firstcharge accumulation unit, wherein the first portion of the firstelectrode of the first pixel is connected to the first chargeaccumulation unit.

(37)

The imaging device of any of (32) to (36), wherein the second portion ofthe first electrode of the first pixel is connected to ground.

(38)

The imaging device of any of (32) to (37), wherein an area of the firstportion of the first electrode of the first pixel is smaller than anarea of the second portion of the first electrode of the first pixel.

(39)

The imaging device of any of (32) to (36) or (38), further comprising:

-   -   a first charge accumulation unit, wherein the first portion of        the first electrode of the first pixel is connected to the first        charge accumulation unit;    -   a second charge accumulation unit, wherein the second portion of        the first electrode of the first pixel is connected to the        second charge accumulation unit;    -   a third charge accumulation unit, wherein the first electrode of        the second pixel is connected to the third charge accumulation        unit.        (40)

The imaging device of any of (32) to (39), further comprising: aninterpixel electrode, wherein the interpixel electrode encloses thefirst and second pixels, and wherein the second portion of the firstelectrode of the first pixel is connected to the interpixel electrode.

(41)

The imaging device of any of (32) to (40), wherein the second portion ofthe first electrode of the first pixel is connected to the interpixelelectrode by an electrode extending portion that is integral to andformed from a same material as the second portion of the first electrodeof the first pixel and the interpixel electrode.

(42)

The imaging device of any of (32) to (41), wherein the first and secondportions of the first electrode of the first pixel are separated fromone another in a vertical direction, and wherein a length of theelectrode extending portion in the vertical direction is equal to alength of the second portion of the first electrode of the first pixelin the vertical direction.

(43)

The imaging device of any of (40) to (42), wherein the interpixelelectrode is connected to one of ground or a voltage source.

(44)

The imaging device of any of (32) to (43), further comprising:

-   -   a plurality of first pixels; and    -   a plurality of second pixels.        (45)

The imaging device of any of (32) to (44), wherein the first pixel is aphase difference pixel, and wherein the second pixel is an imagingpixel.

(46)

An electronic apparatus, comprising:

-   -   an optical unit;    -   a solid-state imaging device that receives light from the        optical unit, the solid-state imaging device including: a        plurality of pixels of a first pixel type, each pixel of the        first pixel type including:    -   a first electrode;    -   a first portion of a photoelectric conversion film; and    -   a first portion of a second electrode, wherein the first portion        of the photoelectric conversion film is between the first        electrode and the first portion of the second electrode, and        wherein the first electrode has a first area; and    -   a plurality of pixels of a second pixel type, each pixel of the        second pixel type including:    -   a first electrode;    -   a second portion of the photoelectric conversion film; and    -   a second portion of the second electrode, wherein the second        portion of the photoelectric conversion film is between the        first electrode and the second portion of the second electrode,        wherein the first electrode has a second area, and wherein the        first area is larger than the second area in a plan view;    -   a control circuit, wherein the control circuit outputs a drive        signal that controls operation of the solid-state imaging        device; and    -   a signal processing circuit, wherein the signal processing        circuit receives pixel signals from the solid-state imaging        device.

REFERENCE SIGNS LIST

-   -   1 Solid-state imaging device    -   2 Pixel    -   2X Ordinary pixel    -   2P Phase difference pixel    -   3 Pixel array unit    -   4 Vertical drive circuit    -   5 Column signal processing circuit    -   7 Output circuit    -   51A, 51B, 51C Lower electrode    -   81 Photoelectric conversion film    -   82 Upper electrode

What is claimed is:
 1. A light detecting device, comprising: a firstpixel for phase difference detection, comprising: a first portion of anupper electrode; a first lower electrode; and a first portion of aphotoelectric conversion film disposed between the first portion of theupper electrode and the first lower electrode; a second pixel for phasedifference detection, comprising: a second portion of the upperelectrode; a second lower electrode; and a second portion of thephotoelectric conversion film disposed between the second portion of theupper electrode and the second lower electrode; and a third pixel forimaging, comprising: a third portion of the upper electrode; a thirdlower electrode; and a third portion of the photoelectric conversionfilm disposed between the third portion of the upper electrode and thethird lower electrode, wherein a planer area of each of the first lowerelectrode and the second lower electrode is larger than a planer area ofthe third lower electrode, wherein the third pixel is disposed betweenthe first pixel and the second pixel, and wherein the first pixel, thesecond pixel, and the third pixel have a same planer area.
 2. The lightdetecting device according to claim 1, further comprising: a lightshielding film, wherein the light shielding film is adjacent to at leasta portion of the upper electrode.
 3. The light detecting deviceaccording to claim 2, wherein the light shielding film is formedadjacent to the first portion and the second portion of thephotoelectric conversion film.
 4. The light detecting device accordingto claim 2, wherein the light shielding film is embedded in aninterlayer insulating film, and wherein at least a portion of theinterlayer insulating film is between the light shielding film and theupper electrode.
 5. The light detecting device according to claim 2,wherein the light shielding film is adjacent to one of the first portionof the upper electrode in the first pixel or the second portion of theupper electrode in the second pixel.
 6. The light detecting deviceaccording to claim 1, further comprising: a first charge accumulationunit, wherein the first lower electrode of the first pixel is connectedto the first charge accumulation unit.
 7. The light detecting deviceaccording to claim 1, further comprising: a first charge accumulationunit, wherein the first lower electrode of the first pixel and thesecond lower electrode of the second pixel are connected to the firstcharge accumulation unit.
 8. The light detecting device according toclaim 1, wherein the first lower electrode and the second lowerelectrode are each divided into a first section and a second section. 9.The light detecting device according to claim 8, wherein the firstsection and the second section have a same size.
 10. The light detectingdevice according to claim 8, wherein the first section and the secondsection are different sizes.
 11. An electronic apparatus, comprising: anoptical unit; a signal processing circuit; and a light detecting device,comprising: a first pixel for phase difference detection, comprising: afirst portion of an upper electrode; a first lower electrode; and afirst portion of a photoelectric conversion film disposed between thefirst portion of the upper electrode and the first lower electrode; asecond pixel for phase difference detection, comprising: a secondportion of the upper electrode; a second lower electrode; and a secondportion of the photoelectric conversion film disposed between the secondportion of the upper electrode and the second lower electrode; and athird pixel for imaging, comprising: a third portion of the upperelectrode; a third lower electrode; and a third portion of thephotoelectric conversion film disposed between the third portion of theupper electrode and the third lower electrode, wherein a planer area ofeach of the first lower electrode and the second lower electrode islarger than a planer area of the third lower electrode, wherein thethird pixel is disposed between the first pixel and the second pixel,and wherein the first pixel, the second pixel, and the third pixel havea same planer area.
 12. The electronic apparatus according to claim 11,further comprising: a light shielding film, wherein the light shieldingfilm is adjacent to at least a portion of the upper electrode.
 13. Theelectronic apparatus according to claim 12, wherein the light shieldingfilm is formed adjacent to the first portion and the second portion ofthe photoelectric conversion film.
 14. The electronic apparatusaccording to claim 12, wherein the light shielding film is embedded inan interlayer insulating film, and wherein at least a portion of theinterlayer insulating film is between the light shielding film and theupper electrode.
 15. The electronic apparatus according to claim 12,wherein the light shielding film is adjacent to one of the first portionof the upper electrode in the first pixel or the second portion of theupper electrode in the second pixel.
 16. The electronic apparatusaccording to claim 11, further comprising: a first charge accumulationunit, wherein the first lower electrode of the first pixel is connectedto the first charge accumulation unit.
 17. The electronic apparatusaccording to claim 11, further comprising: a first charge accumulationunit, wherein the first lower electrode of the first pixel and thesecond lower electrode of the second pixel are connected to the firstcharge accumulation unit.
 18. The electronic apparatus according toclaim 11, wherein the first lower electrode and the second lowerelectrode are each divided into a first section and a second section.19. The electronic apparatus according to claim 18, wherein the firstsection and the second section have a same size.